Opto-spintronics in InP using ferromagnetic tunnel spin filters

نویسندگان

  • Christian Caspers
  • Koki Takanashi
چکیده

Wedemonstrate opto-spintronics using Fe-doped IndiumPhosphide (InP). Themethod is based on optical orientation of InP conduction electron spinswhich are electrically detected in planar InP/ oxide/Ni tunnel spinfilters.We separate the optical excitation from electrical detection, avoiding thus additional interactions of photonswith the ferromagnet. Interface engineering provides a surface iron accumulation and semiconducting Fe:In2O3 in the oxide tunnel barrier. The spinfiltering effect switches to positive or negative asymmetry, depending on the Fe concentration in Fex:InP.With respect to the Fe-like electronic structure of these oxides, we can explain the opposite spin selection mechanisms as interface effects. In the temperature regionwhere the InPmobility peaks, wefind a maximumof spin-dependent asymmetry of∼9% in semi-insulating Fe:InP (001), and show the electrical spin detection in hyperpolarized InP also at room temperature. Such robust electronic spin detection in an InPnanodevice is planned to complement dynamic nuclear polarization experiments.

برای دانلود متن کامل این مقاله و بیش از 32 میلیون مقاله دیگر ابتدا ثبت نام کنید

ثبت نام

اگر عضو سایت هستید لطفا وارد حساب کاربری خود شوید

منابع مشابه

How to Measure Degree of Spin Polarization

Spintronics is an emerging field of research combining two traditional branches of physics: magnetism and electronics. It is based on the ability of ferromagnetic materials to conduct spin-polarized currents. The effectiveness of spintronics depends on the extent to which a current is spin-polarized [1], which in turn depends on the spin polarization of the ferromagnetic materials. All device d...

متن کامل

Tunnel barrier fabrication on Si and its impact on a spin transistor

The realization of many future spintronic devices requires efficient spin injection into semiconductor structures. Critical considerations include interfacial intermixing of the metallic components and oxygen with Si, and the conditions for Schottky barrier formation. Both impact the design of a silicon-based spin transistor, which tunnelinjects carriers from a ferromagnetic emitter into the Si...

متن کامل

1 M ar 2 01 1 Experimental Spin Ratchet

Spintronics relies on the ability to transport and utilize the spin properties of an electron rather than its charge. We describe a spin rachet at the singleelectron level that produces spin currents with no net bias or charge transport. Our device is based on the ground state energetics of a single electron transistor comprising a superconducting island connected to normal leads via tunnel bar...

متن کامل

THESIS FOR THE DEGREE OF DOCTOR OF PHILOSOPHY Spin Transport in Two-Dimensional Material Heterostructures

Spintronics is considered as an alternative for information processing beyond the charge based technology. The spintronic device performance depend on the spin relaxation mechanisms in the channel material. Si and graphene are interesting for their long spin coherence lengths and ideal for spin transport channels. Additionally, the interest in newly discovered two-dimensional semiconductors (2D...

متن کامل

Cotunneling through a quantum dot coupled to ferromagnetic leads with noncollinear magnetizations

Spin-dependent electronic transport through a quantum dot has been analyzed theoretically in the cotunneling regime by means of the second-order perturbation theory. The system is described by the impurity Anderson Hamiltonian with arbitrary Coulomb correlation parameter U . It is assumed that the dot level is intrinsically spin-split due to an effective molecular field exerted by a magnetic su...

متن کامل

ذخیره در منابع من


  با ذخیره ی این منبع در منابع من، دسترسی به آن را برای استفاده های بعدی آسان تر کنید

برای دانلود متن کامل این مقاله و بیش از 32 میلیون مقاله دیگر ابتدا ثبت نام کنید

ثبت نام

اگر عضو سایت هستید لطفا وارد حساب کاربری خود شوید

عنوان ژورنال:

دوره   شماره 

صفحات  -

تاریخ انتشار 2015